Researchers at Nagoya University in Japan have created the first functional pn diodes using Ga 2 O 3. Their method 'P-type layer formation study for Ga 2 O 3 by employing Ni ion implantation with ...

Researchers from University of Science and Technology of China (USTC) have achieved dynamic junction temperature (T j) mapping of a vertical GaN PiN diode during extreme stress transients up to 10000 ...

A recent study published in Light: Science & Applications introduced a new method for determining the PN junction depth in a silicon wafer. This technique works at nanometer-scale resolution and is ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

Perioperative FLOT (fluorouracil, leucovorin, oxaliplatin, and docetaxel) is a standard therapy for resectable gastric and gastroesophageal junction adenocarcinomas, but recurrence rates remain high.

Abstract: Temperature dependence of the energy conversion efficiency of diamond pn junction betavoltaic cells was evaluated. We fabricated pseudo vertical diamond pn junction diode and characterized ...

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...

Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL), Korea ...